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BCX68
NPN Silicon AF Transistors For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary type: BCX69 (PNP)
1 2 3
Thermal Resistance
1For calculation of R thJA please refer to Application Note Thermal Resistance
1

2
VPS05162
Type BCX68 BCX68-10 BCX68-16 BCX68-25 Maximum Ratings Parameter
Marking CA CB CC CD 1=B 1=B 1=B 1=B
Pin Configuration 2=C 2=C 2=C 2=C 3=E 3=E 3=E 3=E
Package SOT89 SOT89 SOT89 SOT89
Symbol VCEO VCBO VEBO
Values 20 25 5 1 2 100 200 1 150 -65 ... 150
Unit V
Collector-emitter voltage Collector-base voltage Emitter-base voltage
DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 130 C Junction temperature Storage temperature
IC ICM IB IBM Ptot Tj Tstg
A mA W C
Junction - soldering point 1)
RthJS
20
K/W
Jun-29-2001
BCX68
Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. Characteristics Collector-emitter breakdown voltage IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Emitter-base breakdown voltage IE = 1 A, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 C DC current gain 1) IC = 5 mA, VCE = 10 V DC current gain 1) IC = 500 mA, VCE = 1 V BCX68 BCX68-10 BCX68-16 BCX68-25 DC current gain 1) IC = 1 A, VCE = 1 V Collector-emitter saturation voltage1) IC = 1 A, IB = 100 mA Base-emitter voltage 1) IC = 5 mA, VCE = 10 V IC = 1 A, VCE = 1 V VBE(ON) 0.6 1 VCEsat 0.5 hFE hFE 85 85 100 160 60 100 160 250 375 160 250 375 hFE 50 ICBO 100 ICBO 100 V(BR)EBO 5 V(BR)CBO 25 V(BR)CEO 20 typ. max.
Unit
V
nA A -
V
AC Characteristics Transition frequency IC = 100 mA, VCE = 5 V, f = 20 MHz fT 100 MHz
1) Pulse test: t =300s, D = 2%
2
Jun-29-2001
BCX68
Total power dissipation Ptot = f(TS)
Collector current I C = f (VBE)
VCE = 1V
10 4 mA
BCX 68 EHP00461
1.1
W
0.9 0.8
C
10 3 5 100 C 25 C -50 C
Ptot
0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 0
10 2 5
10 5
1
10 0
15 30 45 60 75 90 105 120
C 150 TS
0
0.2
0.4
0.6
0.8
1.0 V 1.2 VBE
Permissible pulse load
Ptotmax / PtotDC = f (tp )
10 3 Ptot max 5 Ptot DC
BCX 68 EHP00462
Transition frequency fT = f (IC)
VCE = 5V
10 3 MHz
T
BCX 68 EHP00463
tp D= T
tp
fT
5
10 2 5
10 1 5
D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
10 2
5
10 0 10 -6
10 -5
10 -4
10 -3
10 -2
s tp
10 0
10 1 10 0
5 10 1
5
10 2
mA
10 3
C
3
Jun-29-2001
BCX68
DC current gain hFE = f (IC )
VCE = 1V
10 3 5
BCX 68 EHP00464
Collector-emitter saturation voltage
IC = f (VCEsat), h FE = 10
4 BCX 68 EHP00465
10 mA
h FE
100 C 10 2 5 25 C -50 C
C
10 5 100 C 25 C -50 C
3
10 5
2
10 1 5
10 5
1
10 0 10 0
10
0
5 10 1
5 10 2
5 10 3
mA 10 4
0
0.2
0.4
0.6
V
0.8
C
VCE sat
Collector cutoff current ICBO = f (TA)
VCB = 25V
10 5 nA
BCX 68 EHP00466
Base-emitter saturation voltage
IC = f (VBEsat), hFE = 10
10 4 mA
BCX 68 EHP00467
CB0
10 4 5 10 5 10 2 5 10 5 10 0
1 3
max
C
10 3 5 100 C 25 C -50 C
10 2
typ
5
10 5
1
0
50
100
C TA
150
10 0
0
0.2
0.4
0.6
0.8
1.0 V 1.2 VBE sat
4
Jun-29-2001

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